V23990-P629-L83-PM Datasheet, PDF (1/7 Pages) Vincotech – Ultra fast switching frequency

flow BOOST 0 SiC
Features
● High efficiency dual boost
● Ultra fast switching frequency
● Low Inductive Layout
● 1200V SiC MOSFET (Cree) and 1200V SiC diode (Cree)
Target applications
● Solar inverter
Types
● V23990-P629-L83-PM
V23990-P629-L83-PM
target datasheet
1200 V / 80 mΩ
flow 0 12mm housing
Schematic
Tj=25°C, unless otherwise specified
Parameter
Boost Switch
Drain-source voltage
Drain current
Peak drain current
Avalanche energy, single pulse
Total power dissipation
Gate-source voltage
Maximum Junction Temperature
Maximum Ratings
Symbol
Condition
V DSS
ID
I DM
E AS
P tot
V GSS
T jmax
T j = T jmax
t p limited by T jmax
I D = 20 A
V DD = 50 V
T j = T jmax
Ts = 80 °C
Ts = 80 °C
Value
1200
16
60
1000
39
- 10/+25
150
Unit
V
A
A
mJ
W
V
°C
Copyright Vincotech
1
21 Jul. 2015 / Revision 1