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V23990-P629-FXX-PM Datasheet, PDF (1/11 Pages) Vincotech – Maximum Ratings
V23990-P629-FXX-PM
final data sheet
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Maximum Ratings / Höchstzulässige Werte
Parameter
Condition
Symbol
V23990-P629-F46-01-14
P629-F46 1200V/25A
Datasheet values
Unit
max.
Transistor H-bridge(IGBT)
Transistor H-Brücke(IGBT)
Collector-emitter break down voltage
Kollektor-Emitter-Sperrspannung
VCE
1200
V
DC collector current
Kollektor-Dauergleichstrom
Tj=Tjmax Th=80°C, IC
Tc=80°C
30
A
Repetitive peak collector current
tp limited by Tj max
Icpuls
75
A
Periodischer Kollektorspitzenstrom
Power dissipation per IGBT
Verlustleistung pro IGBT
Tj=Tjmax Th=80°C
Ptot
Tc=80°C
73
W
Gate-emitter peak voltage
Gate-Emitter-Spitzenspannung
VGE
±20
V
SC withstand time*
Kurzschlußverhalten*
max. Chip temperature
max. Chiptemperatur
Tj=Tjmax VGE=15V tSC
10
us
VCC=360V
Tjmax
150
°C
Diode H-bridge
Diode H-Brücke
DC forward current
Dauergleichstrom
Tj=Tjmax Th=80°C,
IF
Tc=80°C
18
A
Repetitive peak forward current
tp limited by
IFRM
50
A
Periodischer Spitzenstrom
Power dissipation per Diode
Tj=Tjmax Th=80°C
Ptot
35
W
Verlustleistung pro Diode
Tc=80°C
max. Chip temperature
max. Chiptemperatur
Tjmax
150
°C
Thermal properties
Thermische Eigenschaften
Storage temperature
Lagertemperatur
Operation temperature
Betriebstemperatur
Tstg
-40…+125
°C
Top
-40…+125
°C
Insulation properties
Modulisolation
Insulation voltage
Isolationsspannung
Creepage distance
Kriechstrecke
Clearance
Luftstrecke
t=1min
Vis
4000
Vdc
min 12,7
mm
min 12,7
mm
Additional notes and remarks:
* Allowed number of short circuits must be less than 1000 times,
and time duration between short circuits should be more than 1
second!
Copyright by Vincotech
Revision:1