V23990-P629-F44-14-PM Datasheet, PDF (1/11 Pages) Vincotech – Maximum Ratings

V23990-P629-F44-14-PM
final data sheet
flow0
Maximum Ratings / Höchstzulässige Werte
Parameter
Condition
Symbol
V23990-P629-F44-01-14
P629-F44 1200V/25A
Datasheet values
Unit
max.
Transistor H-bridge(IGBT)
Transistor H-Brücke(IGBT)
Collector-emitter break down voltage
V_CE
Kollektor-Emitter-Sperrspannung
DC collector current
Kollektor-Dauergleichstrom
Tj=Tjmax Th=80°C, I_C
Tc=80°C
Repetitive peak collector current
tp limited by Tj max
I_cpuls
Periodischer Kollektorspitzenstrom
Power dissipation per IGBT
Verlustleistung pro IGBT
Tj=Tjmax Th=80°C
P_tot
Tc=80°C
Gate-emitter peak voltage
V_GE
Gate-Emitter-Spitzenspannung
SC withstand time*
Kurzschlußverhalten*
max. Chip temperature
max. Chiptemperatur
Tj=Tjmax VGE=15V t_SC
VCC=360V
T_jmax
Diode H-bridge
Diode H-Brücke
DC forward current
Dauergleichstrom
Repetitive peak forward current
Periodischer Spitzenstrom
Power dissipation per Diode
Verlustleistung pro Diode
max. Chip temperature
max. Chiptemperatur
Tj=Tjmax Th=80°C,
I_F
Tc=80°C
tp limited by
I_FRM
Tj=Tjmax Th=80°C
P_tot
Tc=80°C
T_jmax
Thermal properties
Thermische Eigenschaften
Storage temperature
T_stg
Lagertemperatur
Operation temperature
T_op
Betriebstemperatur
Insulation properties
Modulisolation
Insulation voltage
Isolationsspannung
Creepage distance
Kriechstrecke
Clearance
Luftstrecke
t=1min
V_is
1200
V
28
A
75
A
73
W
±20
V
10
us
150
°C
24
A
50
A
43
W
150
°C
-40…+125
°C
-40…+125
°C
4000
Vdc
min 12,7
mm
min 12,7
mm
Additional notes and remarks:
* Allowed number of short circuits must be less than 1000 times,
and time duration between short circuits should be more than 1
second!
Copyright by Vincotech
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