V23990-P624-F24-P2-14 Datasheet, PDF (1/14 Pages) Vincotech – Low inductive design

fast PACK 0 H 2nd gen
Features
Ɣ Low inductive design
Ɣ Clip-in PCB mounting
Target Applications
Ɣ Distributed Power Generation
Ɣ Welding
Types
Ɣ V23990-P624-F24
V23990-P624-F24-PM
preliminary datasheet
600V / 75A
flow 0 housing
Schematic
P624-F24
Parameter
Maximum Ratings
Symbol
Condition
Value
Transistor H-bridge (IGBT)
Collector-emitter break down voltage
V_CE
600
DC collector current
Repetitive peak collector current
I_C
I_cpuls
T_j=T_jmax
tp limited by T_jmax
T_h=80°C
61
T_c=80°C
80
225
Power dissipation per IGBT
Gate-emitter peak voltage
P_tot
T_j=T_jmax
V_GE
T_h=80°C
96
T_c=80°C
145
±20
Tj=125°C
SC withstand time*
t_SC
V_GE=15V
6
V_CC=360V
Maximum junction temperature
T_jmax
175
* It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits
Diode H-bridge
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum junction temperature
I_F
I_FRM
P_tot
T_jmax
T_j=T_jmax
tp limited by T_jmax
T_j=T_jmax
T_h=80°C
50
T_c=80°C
65
225
T_h=80°C
74
T_c=80°C
112
175
Unit
V
A
A
W
V
Ps
°C
A
A
W
°C
Copyright by Vincotech
1
Revision:2