V23990-P622-F74-D1-14 Datasheet, PDF (1/11 Pages) Vincotech – Drain to source voltage

flow0
Maximum Ratings
Parameter
V23990-P622-F74-PM
final data sheet
Condition
Symbol
V23990-P622-F74-01-14
P622-F74 600V/30A
Datasheet values
Unit
max.
Transistor H-bridge(MOSFET)
Drain to source voltage
DC drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
Drain source voltage slope
Power dissipation
Gate-source peak voltage
max. Chip temperature
Tj=Tjmax
Tj=25°C
tp=1ms
Th=80°C,
Tc=80°C
Th=80°C,
Tc=80°C
I_D=10A V_DD=50V
I_D=20A V_DD=50V
Tj=Tjmax
Is=46A
Tj=125°C
V_DS=480V
Tj=Tjmax Th=80°C,
Tc=80°C
VDS
Id
Idpuls
E_AS
E_AR
I_AR
dv/dt
Ptot
Vgs
Tjmax
600
32
115
1800
1
20
80
173
±20
150
V
A
A
mJ
mJ
A
V/ns
W
V
°C
Diode H-bridge(Body diode)
DC forward current
Repetitive peak forward current
Reverse diode dv/dt
Max. diode commutation speed
Power dissipation per Diode
Thermal properties
max. Chip temperature
Storage temperature
Operation temperature
Tj=Tjmax Th=80°C,
Tc=80°C
tp limited by Tj max
IF
IFRM
Is=46A
Tj=125°C
Is=46A
Tj=125°C
Tj=Tjmax
VDS=480V
VDS=480V
Th=80°C
Tc=80°C
dv/dt
di/dt
Ptot
T_jmax
T_stg
T_op
52
A
115
A
40
V/ns
600
A/us
173
W
175
°C
-40…+125
°C
-40…+125
°C
Insulation properties
Insulation voltage
Creepage distance
Clearance
t=1min
V_is
4000
Vdc
min 12,7
mm
min 12,7
mm
Additional notes and remarks:
* Allowed number of short circuits must be less than 1000 times,
and time duration between short circuits should be more than 1
second!
Copyright by Vincotech
Revision:1