V23990-K242-A-T1-14 Datasheet, PDF (1/13 Pages) Vincotech – 2nd Gen. PIM Size 3, 600V / 75A

V23990-K242-A-PM
MiniSKiiP 2nd Gen. PIM Size 3, 600V / 75A
Maximum Ratings / Höchstzulässige Werte
Parameter
Condition
Symbol
target datasheet
V23990-K242-A-00-14
Values
Unit
max.
Input Rectifier Bridge
Gleichrichter
Repetitive peak reverse voltage
V_RRM
1600
V
Periodische Rückw. Spitzensperrspannung
Forward current per diode
Dauergrenzstrom
Surge forward current
DC current T_h=80°C;
I_FAV
58
A
Tc=80°C
80
t_p=10ms T_j=25°C
I_FSM
700
A
Stoßstrom Grenzwert
I²t-value
t_p=10ms T_j=25°C
I²t
2450
A²s
Grenzlastintegral
Power dissipation per Diode
Verlustleistung pro Diode
max. chip temperature
T_j=150°C T_h=80°C
P_tot
62
W
T_c=80°C
93
T_jmax
150
°C
max. Chiptemperatur
Transistor Inverter
Transistor Wechselrichter
Collector-emitter break down voltage
V_CE
600
V
Kollektor-Emitter-Sperrspannung
DC collector current
T_j=T_jmax Th=80°C
I_C
65
A
Kollektor-Dauergleichstrom
T_c=80°C
85
Repetitive peak collector current
t_p limted by T_jmax
I_cpuls
225
A
Periodischer Kollektorspitzenstrom
Power dissipation per IGBT
T_j=T_jmax Th=80°C
P_tot
105
W
Verlustleistung pro IGBT
T_c=80°C
160
Gate-emitter peak voltage
V_GE
±20
V
Gate-Emitter-Spitzenspannung
SC withstand time *
Tj”150°C V_GE=15V
t_SC
5
us
Kurzschlußverhalten *
V_CC=360V
max. chip temperature
T_jmax
175
°C
max. Chiptemperatur
Diode Inverter
Diode Wechselrichter
DC forward current
Dauergleichstrom
Repetitive peak forward current
Periodischer Spitzenstrom
Power dissipation per Diode
Verlustleistung pro Diode
max. chip temperature
max. Chiptemperatur
T_j=T_jmax Th=80°C,
I_F
52
A
T_c=80°C
55, limted by bond wires
t_p limted by T_jmax
I_FRM
225
A
T_j=150°C Th=80°C
P_tot
77
W
T_c=80°C
120
T_jmax
175
°C
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