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V23990-K229-A-P1-14 Datasheet, PDF (1/16 Pages) Vincotech – 2nd Gen. PIM Size 2, 1200V / 25A
V23990-K229-A-PM
MiniSKiiP® 2nd Gen. PIM Size 2, 1200V / 25A
Maximum Ratings / Höchstzulässige Werte
Parameter
Condition
Symbol
preliminary datasheet
V23990-K229-A-01-14
Values
Unit
max.
Input Rectifier Bridge
Gleichrichter
Repetitive peak reverse voltage
VRRM
1600
V
Periodische Rückw. Spitzensperrspannung
Forward current per diode
Dauergrenzstrom
Surge forward current
DC current Th=80°C;
IFAV
40 limited by power terminal
A
Tc=80°C
40 limited by power terminal
tp=10ms Tj=25°C
IFSM
370
A
Stoßstrom Grenzwert
I2t-value
tp=10ms Tj=25°C
I2t
680
A2s
Grenzlastintegral
Power dissipation per Diode
Tj=150°C Th=80°C
Ptot
50
W
Verlustleistung pro Diode
Tc=80°C
76
Transistor Inverter
Transistor Wechselrichter
Collector-emitter break down voltage
VCE
1200
V
Kollektor-Emitter-Sperrspannung
DC collector current
Tj=150°C Th=80°C,
IC
27
A
Kollektor-Dauergleichstrom
Tc=80°C
35
Repetitive peak collector current
tp=1ms Th=80°C
Icpuls
54
A
Periodischer Kollektorspitzenstrom
Power dissipation per IGBT
Tj=150°C Th=80°C
Ptot
56
W
Verlustleistung pro IGBT
Tc=80°C
85
Gate-emitter peak voltage
VGE
±20
V
Gate-Emitter-Spitzenspannung
SC withstand time
Kurzschlußverhalten
Tj”125°C VGE=15V
tSC
10
us
VCC=900V
Diode Inverter
Diode Wechselrichter
DC forward current
Tj=150°C Th=80°C,
IF
23
A
Dauergleichstrom
Tc=80°C
31
Repetitive peak forward current
tp=1ms Th=80°C
IFRM
47
A
Periodischer Spitzenstrom
Power dissipation per Diode
Tj=150°C Th=80°C
Ptot
41
W
Verlustleistung pro Diode
Tc=80°C
62
Transistor BRC
Transistor BRC
Collector-emitter break down voltage
Kollektor-Emitter-Sperrspannung
DC collector current
Kollektor-Dauergleichstrom
Repetitive peak collector current
Periodischer Kollektorspitzenstrom
Power dissipation per IGBT
Verlustleistung pro IGBT
Gate-emitter peak voltage
Gate-Emitter-Spitzenspannung
SC withstand time
Kurzschlußverhalten
MiniSKiiP is a trademark of SEMIKRON.
Copyright by Vincotech SEMIKRON is a trademark. Tyco is a trademark.
copyright by Tyco Electronics
Tj=150°C
Tj=150°C
tp=1ms
Th=80°C
Tc=80°C
Th=80°C
Tj=150°C Th=80°C
Tc=80°C
VCE
IC
Icpuls
Ptot
VGE
Tj”125°C VGE=15V
tSC
VCE=900 V
Finsinger Feld 1, D-85521 Ottobrunn
Page1
1200
V
32
A
36
64
A
69
W
105
±20
V
10
us
Revision:1
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