V23990-K223-A-T1-14 Datasheet, PDF (1/14 Pages) Vincotech – 2nd Gen. PIM Size 2, 600V / 50A

V23990-K223-A-PM
MiniSKiiP® 2nd Gen. PIM Size 2, 600V / 50A
Maximum Ratings / Höchstzulässige Werte
Parameter
Condition
Symbol
target datasheet
V23990-K223-A-00-14
Values
Unit
max.
Input Rectifier Bridge
Gleichrichter
Repetitive peak reverse voltage
V_RRM
1600
V
Periodische Rückw. Spitzensperrspannung
Forward current per diode
Dauergrenzstrom
Surge forward current
DC current T_h=80°C;
I_FAV
40 limited by power terminal
A
Tc=80°C
40 limited by power terminal
t_p=10ms T_j=25°C
I_FSM
370
A
Stoßstrom Grenzwert
I²t-value
t_p=10ms T_j=25°C
I²t
680
A²s
Grenzlastintegral
Power dissipation per Diode
T_j=150°C T_h=80°C
P_tot
50
W
Verlustleistung pro Diode
T_c=80°C
76
Transistor Inverter
Transistor Wechselrichter
Collector-emitter break down voltage
V_CE
600
V
Kollektor-Emitter-Sperrspannung
DC collector current
T_j=175°C Th=80°C,
I_C
38
A
Kollektor-Dauergleichstrom
T_c=80°C
49
Repetitive peak collector current
t_p limited by T_jmax
I_cpuls
150
A
Periodischer Kollektorspitzenstrom
Power dissipation per IGBT
T_j=175°C Th=80°C
P_tot
70
W
Verlustleistung pro IGBT
T_c=80°C
106
Gate-emitter peak voltage
V_GE
±20
V
Gate-Emitter-Spitzenspannung
SC withstand time *
Tj”125°C V_GE=15V
t_SC
5
us
Kurzschlußverhalten *
V_CC=900V
max. chiptemperature
T_jmax
175
°C
max. Chiptemperatur
Diode Inverter
Diode Wechselrichter
DC forward current
T_j=175°C Th=80°C,
I_F
35
A
Dauergleichstrom
T_c=80°C
46
Repetitive peak forward current
t_p limited by T_jmax
I_FRM
150
A
Periodischer Spitzenstrom
Power dissipation per Diode
Verlustleistung pro Diode
max. chiptemperature
T_j=175°C Th=80°C
P_tot
58
W
T_c=80°C
87
T_jmax
175
°C
max. Chiptemperatur
MiniSKiiP is a trademark of SEMIKRON.
Copyright by Vincotech _{SEMIKRON is a trademark. Tyco is a trademark.}
copyright by Tyco Electronics
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