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V23990-K222-A-T1-14 Datasheet, PDF (1/14 Pages) Vincotech – 2nd Gen. PIM Size 2, 600V / 30A
V23990-K222-A-PM
MiniSKiiP® 2nd Gen. PIM Size 2, 600V / 30A
Maximum Ratings / Höchstzulässige Werte
Parameter
Condition
Symbol
target datasheet
V23990-K222-A-00-14
Values
Unit
max.
Input Rectifier Bridge
Gleichrichter
Repetitive peak reverse voltage
VRRM
1600
V
Periodische Rückw. Spitzensperrspannung
Forward current per diode
Dauergrenzstrom
Surge forward current
DC current Th=80°C;
IFAV
40 limited by power terminal
A
Tc=80°C
40 limited by power terminal
tp=10ms Tj=25°C
IFSM
370
A
Stoßstrom Grenzwert
I2t-value
tp=10ms Tj=25°C
I2t
680
A2s
Grenzlastintegral
Power dissipation per Diode
Tj=150°C Th=80°C
Ptot
50
W
Verlustleistung pro Diode
Tc=80°C
76
max. chip temperature
Tjmax
150
°C
max. Chiptemperatur
Transistor Inverter
Transistor Wechselrichter
Collector-emitter break down voltage
VCE
600
V
Kollektor-Emitter-Sperrspannung
DC collector current
Tj=Tjmax Th=80°C,
IC
28
A
Kollektor-Dauergleichstrom
Tc=80°C
36
Repetitive peak collector current
tp limited by Tjmax
Icpuls
90
A
Periodischer Kollektorspitzenstrom
Power dissipation per IGBT
Tj=Tjmax Th=80°C
Ptot
54
W
Verlustleistung pro IGBT
Tc=80°C
82
Gate-emitter peak voltage
VGE
±20
V
Gate-Emitter-Spitzenspannung
SC withstand time *
Tj”150°C VGE=15V
tSC
5
us
Kurzschlußverhalten *
VCC=360V
max. chip temperature
Tjmax
175
°C
max. Chiptemperatur
Diode Inverter
Diode Wechselrichter
DC forward current
Tj=Tjmax Th=80°C,
IF
26
A
Dauergleichstrom
Tc=80°C
34
Repetitive peak forward current
tp limited by Tjmax
IFRM
90
A
Periodischer Spitzenstrom
Power dissipation per Diode
Verlustleistung pro Diode
max. chip temperature
Tj=Tjmax Th=80°C
Ptot
40
W
Tc=80°C
60
Tjmax
175
°C
max. Chiptemperatur
Copyright by Vincotech MiniSKiiP is a trademark of SEMIKRON.
SEMIKRON is a trademark. Tyco is a trademark.
copyright by Tyco Electronics
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