V23990-K200-A-P1-14 Datasheet, PDF (1/16 Pages) Vincotech – MiniSKiiP 2nd Gen. PIM Size 1, 1200V / 15A

V23990-K200-A-PM
MiniSKiiP 2nd Gen. PIM Size 1, 1200V / 15A
Maximum Ratings / Höchstzulässige Werte
Parameter
Condition
Symbol
preliminary datasheet
V23990-K200-A-01-14
Values
Unit
max.
Input Rectifier Bridge
Gleichrichter
Repetitive peak reverse voltage
V_RRM
1600
V
Periodische Rückw. Spitzensperrspannung
Forward current per diode
Dauergrenzstrom
DC current T_h=80°C;
I_FAV
20 limited by power terminal
A
Tc=80°C
20 limited by power terminal
Surge forward current
t_p=10ms T_j=25°C
I_FSM
220
A
Stoßstrom Grenzwert
I²t-value
t_p=10ms T_j=25°C
I²t
240
A²s
Grenzlastintegral
Power dissipation per Diode
Verlustleistung pro Diode
T_j=150°C T_h=80°C
P_tot
46
W
T_c=80°C
70
Transistor Inverter
Transistor Wechselrichter
Collector-emitter break down voltage
Kollektor-Emitter-Sperrspannung
DC collector current
Kollektor-Dauergleichstrom
Repetitive peak collector current
Periodischer Kollektorspitzenstrom
Power dissipation per IGBT
Verlustleistung pro IGBT
Gate-emitter peak voltage
Gate-Emitter-Spitzenspannung
SC withstand time
Kurzschlußverhalten
V_CE
1200
V
T_j=150°C Th=80°C,
I_C
19
A
T_c=80°C
20 limited by power terminal
t_p=1ms
T_h=80°C
I_cpuls
38
A
T_j=150°C Th=80°C
P_tot
47
W
T_c=80°C
72
V_GE
±20
V
Tj”125°C V_GE=15V
t_SC
10
us
V_CC=900V
Diode Inverter
Diode Wechselrichter
DC forward current
T_j=150°C Th=80°C,
I_F
17
A
Dauergleichstrom
T_c=80°C
20
Repetitive peak forward current
t_p=1ms
T_h=80°C
I_FRM
34
A
Periodischer Spitzenstrom
Power dissipation per Diode
Verlustleistung pro Diode
T_j=150°C Th=80°C
P_tot
34
W
T_c=80°C
52
Transistor BRC
Transistor BRC
Collector-emitter break down voltage
V_CE
1200
V
Kollektor-Emitter-Sperrspannung
DC collector current
T_j=150°C Th=80°C
I_C
18
A
Kollektor-Dauergleichstrom
T_j=150°C T_c=80°C
20
Repetitive peak collector current
t_p=1ms
T_h=80°C
I_cpuls
36
A
Periodischer Kollektorspitzenstrom
Power dissipation per IGBT
T_j=150°C Th=80°C
P_tot
44
W
Verlustleistung pro IGBT
T_c=80°C
67
Gate-emitter peak voltage
V_GE
±20
V
Gate-Emitter-Spitzenspannung
SC withstand time
Tj”125°C VGE=15V
t_SC
10
us
Kurzschlußverhalten
VCE=900 V
Copyright by Vincotech ^{MiniSKiiP is a trademark of SEMIKRON.}
SEMIKRON is a trademark. Tyco is a trademark.
copyright by Tyco Electronics
Finsinger Feld 1, D-85521 Ottobrunn
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