F206R6A150SB Datasheet, PDF (1/6 Pages) Vincotech – IGBT3 technology for low saturation losses

flowPACK 2
Features
● Inverter, blocking diodes
● Built-in thermistor
● IGBT3 technology for low saturation losses
Target Applications
● Power Regeneration
Types
● 30-F206R6A150SB-M445E
● 30-F206R6A150SB01-M445E10
F206R6A150SB
target datasheet
600V/150A
flow2 housing
Schematic
T_j=25°C, unless otherwise specified
Parameter
Blocking Diode
Repetitive peak reverse voltage
DC forward current
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
Maximum Ratings
Symbol
Condition
V_RRM
I_FAV
I_FSM
I²t
P_tot
T_jmax
T_j=T_jmax
t_p=10ms
T_j=T_jmax
T_h=80°C
T_c=80°C
T_j=25°C
T_h=80°C
T_c=80°C
V_CE
I_C
I_Cpulse
P_tot
V_GE
t_SC
V_CC
T_jmax
T_j=T_jmax
t_p limited by T_jmax
V_CE ≤ 600V, Tj ≤ Top max
T_j=T_jmax
T_j≤150°C
V_GE=15V
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
Value
Unit
1600
V
200
A
200
1000
A
5000
A²s
123
W
186
150
°C
600
V
150
A
150
450
A
450
A
207
W
316
±20
V
6
μs
360
V
175
°C
copyright by Vincotech
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Revision: 3