|
F206R6A050SB Datasheet, PDF (1/6 Pages) Vincotech – IGBT3 technology for low saturation losses | |||
|
flowPACK 2
Features
â Inverter, blocking diodes
â Built-in thermistor
â IGBT3 technology for low saturation losses
Target Applications
â Power Regeneration
Types
â 30-F206R6A050SB-M442E
â 30-F206R6A050SB01-M442E10
F206R6A050SB
target datasheet
600V/50A
flow2 housing
Schematic
Tj=25°C, unless otherwise specified
Parameter
Blocking Diode
Repetitive peak reverse voltage
DC forward current
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
Maximum Ratings
Symbol
Condition
VRRM
IFAV
IFSM
I2t
Ptot
Tjmax
Tj=Tjmax
tp=10ms
Tj=Tjmax
Th=80°C
Tc=80°C
Tj=25°C
Th=80°C
Tc=80°C
VCE
IC
ICpulse
Ptot
VGE
tSC
VCC
Tjmax
Tj=Tjmax
tp limited by Tjmax
VCE ⤠600V, Tj ⤠Top max
Tj=Tjmax
Tjâ¤150°C
VGE=15V
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Value
Unit
1600
V
160
A
160
1400
A
9800
A2s
135
W
206
150
°C
600
V
60
A
75
150
A
150
A
116
W
176
±20
V
6
μs
360
V
175
°C
copyright by Vincotech
1
Revision: 3
|
▷ |