VCXO-5030-DAE-H Datasheet, PDF (2/7 Pages) Vectron International, Inc – Voltage Controlled Crystal Oscillator

Performance Speci cations
Parameter
Min Typ Max
Units
Condition
Electrical Performance @ 25°C for the CMOS output option
Supply voltage
4.5
5.0
5.5
VDC
3.0
3.3
3.6
VDC
Current consumption
10mA + 0.25mA per MHz, typical
Center Frequency
1.024
77.760
MHZ
Absolute Pull Range over the operating
-100
temperature range, aging and power
-80
supply Vc= 0.5 to 4.5 or 0.3 to 3.0 V
-50
-100
-80
-50
+100
+80
+50
+100
+80
+50
ppm
ppm
ppm
ppm
ppm
ppm
-40 ...+85 °C
-40 ...+85 °C
-40 ...+85 °C
0 ... +70 °C
0 ... +70 °C
0 ... +70 °C
Gain Transfer
Positive
Output Level High
0.8
V
Output Level Low
0.1
V
Output Rise/Fall Time
5
ns
Duty Cycle
Input Leakage
45
55
%
40
60
%
±1
uA
Control Voltage Modulation BW
10
KHz
RMS Jitter, 77.760MHz
3
ps
RMS Jitter, 77.760MHz, 12kHz to 20MHZ
<0.5
ps
Maximum Control Voltage
0
Vdd
Maximum Supply Voltage
7
V
Storage Temperature
-55
+125
°C
Soldering Temp./Time
240/10
°C/s
1. Power supply bypass is required and a 0.1uF in parallel with a 0.01uF high frequency capacitor is recommended.
2. Figure 1 de nes these parameters. Figure 2 illustrates the load used to test devices.
3. Duty cycle is de ned as on-time versus period at 1.4 V for TTL, and 2.5 V for CMOS (5volt supply) and at 1.65 V for CMOS (3.3 volt
operation)
Output Waveform
Mechanical Shock
Mechanical Vibration
Solderability
Gross and Fine Leak
Resistance to Solvents
Output Test Conditions (25±5°C) for 5 volt
devices, 15pF cap only for 3.3V.
Environmental Compliance
MIL-STD-883, Method 2002
MIL-STD-883, Method 2007
MIL-STD-883, Method 2003
MIL-STD-883, Method 1014
MIL-STD-883, Method 2015
Vectron International • 267 Lowell Road, Hudson, NH 03051 • Tel: 1-88-VECTRON-1 • http://www.vectron.com