V10PM10_15 Datasheet, PDF (3/5 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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V10PM10
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise specified)
11.0
10.0
T_JM = 124 °C, R_thJM = 4 °C/W
9.0
8.0
7.0
6.0
5.0
4.0 ^{TA = 25 °C, RthJA =75 °C/W}
3.0
2.0
1.0 ^{TM measured at cathode}
terminal mount typical values
0.0
0
25
50
75 100 125 150
Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
100
10
T_A = 150 °C
T_A = 125 °C
1
T_A = 100 °C
0.1
0.01
0.001
T_A = 25 °C
0.0001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 1.0
D = 0.1
T
D = t_p/T
t_p
1 2 3 4 5 6 7 8 9 10 11 12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
10 000
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
T_A = 150 °C
10
T_A = 125 °C
1
T_A = 100 °C
0.1
0
T_A = 25 °C
0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
Junction to Ambient
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 03-Jul-15
3
Document Number: 87628
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