V10P8-M3_15 Datasheet, PDF (3/5 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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10
T_A = 150 °C
T_A = 125 °C
T_A = 100 °C
1
T_A = 25 °C
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
T_A = 150 °C
10
T_A = 125 °C
T_A = 100 °C
1
0.1
0.01
T_A = 25 °C
0.001
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
V10P8-M3, V10P8HM3
Vishay General Semiconductor
10 000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
1000
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
Junction to Ambient
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 05-May-15
3
Document Number: 87712
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