V10D45C_15 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

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100
T_A = 150 °C
10
T_A = 125 °C
1
T_A = 100 °C
T_A = 25 °C
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
10
T_A = 150 °C
T_A = 125 °C
1
T_A = 100 °C
0.1
0.01
T_A = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
10 000
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
V10D45C
Vishay General Semiconductor
100
Junction to Ambient
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Diode
50
Epoxy printed circuit
45
board FR4 copper
thickness = 70 µm
40
35
30
25
S (cm²)
20
123456789
Copper Pad Areas (cm²)
Fig. 7 - Thermal Resistance Junction-to-Ambient vs.
Copper Pad Areas
Revision: 06-May-15
3
Document Number: 89992
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