V12WM100C-M3_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual Trench MOS Barrier Schottky Rectifier

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V12WM100C-M3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
I_F = 3 A
I_F = 6 A
I_F = 3 A
I_F = 6 A
Reverse current per diode
V_R = 100 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  5 ms}
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
TYP.
0.56
0.65
0.48
0.57
-
3
MAX.
-
0.75
-
0.66
300
15
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V12WM100C
per diode
2.4
R_JC
Typical thermal resistance
per device
1.2
per device
R_JA ^{(1) (2)}
65
Notes
(1) _{The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA}
(2) _{Free air, without heatsink}
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
V12WM100C-M3/I
0.38
PACKAGE CODE
I
BASE QUANTITY
2500/reel
DELIVERY MODE
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
14
Rth_JA=Rth_JC=1.2^oC/W
12
10
8
6
4
Rth_JA=65^oC/W
2
0
0
25
50
75
100 125 150
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 0.8
D = 1.0
T
D = t_p/T
t_p
0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 04-Dec-13
2
Document Number: 89973
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