English
Language : 

V12P15_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
www.vishay.com
V12P15
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
IF = 6 A
IF = 12 A
IF = 6 A
IF = 12 A
Reverse current
VR = 100 V
VR = 150 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
0.75
1.00
0.60
0.66
0.02
2.5
-
5
MAX.
-
1.08
-
0.72
-
-
0.25
16
UNIT
V
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
V12P15
Typical thermal resistance
RθJA (1)
75
RθJM (2)
4
Notes
(1) Free air, mounted on recommended copper pad area; thermal resistance RθJA - junction to ambient
(2) Mounted on 30 mm x 30 mm pad areas aluminum PCB, thermal resistance RθJM - junction to mount
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
V12P15-M3/H
0.10
V12P15-M3/I
0.10
V12P15HM3/H (1)
0.10
V12P15HM3/I (1)
0.10
Note
(1) AEC-Q101 qualified
PACKAGE CODE
H
I
H
I
BASE QUANTITY
1500
6500
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 03-Jul-15
2
Document Number: 87622
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000