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V12P10_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Trench MOS Barrier Schottky Rectifier
www.vishay.com
V12P10
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
IR = 1.0 mA TA = 25 °C
VBR
100 (minimum)
Instantaneous forward voltage
IF = 5 A
IF = 12 A
IF = 5 A
IF = 12 A
TA = 25 °C
TA = 125 °C
VF (1)
0.50
0.65
0.43
0.58
Reverse current
TA = 25 °C
VR = 70 V
TA = 125 °C
IR (2)
TA = 25 °C
VR = 100 V
TA = 125 °C
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
7.0
4.4
21.3
11.8
MAX.
-
-
0.70
-
0.64
-
-
250
20
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Typical thermal resistance
RJA (1)
RJL
Note
(1) Units mounted on recommended PCB 1 oz. pad layout
V12P10
60
3
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
V12P10-M3/86A
0.10
V12P10-M3/87A
0.10
V12P10HM3/86A (1)
0.10
V12P10HM3/87A (1)
0.10
V12P10HM3_A/H (1)
0.10
V12P10HM3_A/I (1)
0.10
Note
(1) AEC-Q101 qualified
PACKAGE CODE
86A
87A
86A
87A
H
I
BASE QUANTITY
1500
6500
1500
6500
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 16-Dec-14
2
Document Number: 88981
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000