SUD19P06-60L Datasheet, PDF (2/3 Pages) Vaishali Semiconductor – P-Channel 60-V (D-S) 175C MOSFET

SPICE Device Model SUD19P06-60L
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Current ^a
Drain-Source On-State Resistance ^a
Forward Transconductance ^a
Diode Forward Voltage ^a
Dynamic ^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ^c
Gate-Source Charge ^c
Gate-Drain Charge ^c
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
V_DS = V_GS, I_D = −250 µA
V_DS = −5 V, V_GS = −10 V
V_GS = −10 V, I_D = −10 A
V_GS = −10 V, I_D = −10 A, T_J = 125°C
V_GS = −10 V, I_D = −10 A, T_J = 175°C
V_GS = −4.5 V, I_D = −5 A
V_DS = −15 V, I_D = −10 A
I_S = −10 A, V_GS = 0 V
V_GS = 0 V, V_DS = −25 V, f = 1 MHz
V_DS = −30 V, V_GS = −10 V, I_D = −10 A
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Simulated Measured
Data
Data
2
104
0.047
0.083
0.102
0.060
20
− 0.87
0.047
0.061
22
−1
1430
130
84
25
4.5
7
1140
130
90
26
4.5
7
Unit
V
A
Ω
S
V
pF
nC
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2
Document Number: 73154
29-Sep-04