SI8435DB Datasheet, PDF (2/3 Pages) Vaishali Semiconductor – Dual P-Channel 20-V (D-S) MOSFET

SPICE Device Model Si8435DB
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Transconductance^a
g_fs
Diode Forward Voltage^a
V_SD
Dynamic^b
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = V_GS, I_D = −250 µA
V_DS ≤ −5 V, V_GS = −4.5 V
V_GS = −4.5 V, I_D = −3.3 A
V_GS = −2.5 V, I_D = −2.8 A
V_GS = −1.8 V, I_D = −0.76 A
V_DS = −10 V, I_D = −3.3 A
I_S = −1 A, V_GS = 0 V
V_DS = −10 V, V_GS = −4.5 V, I_D = −4.6 A
Simulated Measured
Data
Data
0.80
60
0.063
0.082
0.107
11
−0.78
0.060
0.083
0.108
9
−0.80
5
5.5
0.75
0.75
1.5
1.5
Unit
V
A
Ω
S
V
nC
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Document Number: 74145
S-52479Rev. A, 12-Dec-05