SI4569DY Datasheet, PDF (2/4 Pages) Vaishali Semiconductor – N- and P-Channel 40-V (D-S) MOSFET

SPICE Device Model Si4569DY
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Transconductance^a
g_fs
Diode Forward Voltage^a
V_SD
Dynamic^b
Total Gate Charge
Q_g
V_DS = V_GS, I_D = 250 µA
V_DS = V_GS, I_D = −250 µA
V_DS = 5 V, V_GS = 10 V
V_DS = −5 V, V_GS = −10 V
V_GS = 10 V, I_D = 6 A
V_GS = −10 V, I_D = −6 A
V_GS = 4.5 V, I_D = 4.8 A
V_GS = −4.5 V, I_D = −4.9 A
V_DS = 15 V, I_D = 6 A
V_DS = −15 V, I_D = −6 A
I_S = 1.5 A
I_S = −1.6 A
V_DS = 20 V, V_GS = 10 V, I_D = 5 A
V_DS = −20 V, V_GS = −10 V, I_D = −5 A
Gate-Source Charge
Gate-Source Charge
N-Channel
V_DS = 20 V, V_GS = 4.5 V, I_D = 5 A
Q_gs
P-Channel
V_DS = −20 V, V_GS = −4.5 V, I_D = −5 A
Q_gs
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
Simulated Measured
Data
Data
Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1.2
1.8
224
205
0.021
0.023
0.026
0.031
17
37
0.80
0.80
V
A
0.022
0.026
Ω
0.024
0.031
20
S
17
0.73
V
−0.73
N-Ch
17
P-Ch
34
N-Ch
8.8
P-Ch
20
N-Ch
2.3
P-Ch
4.5
N-Ch
3.2
P-Ch
9.2
21
41
9.6
21
nC
2.3
4.5
3.2
9.2
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2
Document Number: 74183
S-60744Rev. A, 08-May-06