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MMBT2907A Datasheet, PDF (2/3 Pages) STMicroelectronics – SMALL SIGNAL PNP TRANSISTOR | |||
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MMBT2907A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DC Current Gain
âVCE = 10V, âIC = 0.1mA
75
â
â
âVCE = 10V, âIC = 1mA
100
â
â
hFE
âVCE = 10V, âIC = 10mA
100
â
â
â
âVCE = 10V, âIC = 150mA(1) 100
â
300
âVCE = 10V, âIC = 500mA(1)
50
â
â
Collector Cutoff Current
âICEV âVEB = 0.5V, âVCE = 30V
â
â
50
nA
Collector Cutoff Current
âICBO
âVCB = 50V, IE = 0
âVCB = 50V, IE = 0,TA = 125°C
â
â
â
â
0.01
10
µA
Emitter-Base Cutoff Current
âIBL âVEB = 0.5V, âVCE = 30V
â
â
50
nA
Collector-Emitter Saturation Voltage(1)
âVCEsat
âIC = 150mA, âIB = 15mA
âIC = 500mA, âIB = 50mA
â
â
â
0.4
â
1.6
V
Base-Emitter Saturation Voltage(1)
âVBEsat
âIC = 150mA, âIB = 15mA
âIC = 500mA, âIB = 50mA
â
â
â
â
1.3
2.6
V
Collector-Emitter Breakdown Voltage(1)
âV(BR)CEO âIC = 10mA, IB = 0
60
â
â
V
Collector-Base Breakdown Voltage
âV(BR)CBO
âIC = 10µA, IE = 0
60
â
â
V
Emitter-Base Breakdown Voltage
âV(BR)EBO
âIE = 10µA, IC = 0
5.0
â
â
V
Current Gain-Bandwidth Product
fT
âVCE = 20V, âIC = 50mA
f = 100MHz
200
â
â
MHz
Output Capacitance
Cobo
âVCB = 10V, f = 1.0MHz
IE = 0
â
â
8
pF
Input Capacitance
Cibo
âVEB = 2.0V, f = 1.0MHz
IC = 0
â
â
30
pF
Note:
(1) Pulse test: Pulse width ⤠300µs, duty cycle ⤠2.0%
www.vishay.com
2
Document Number 88223
10-May-02
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