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V10D100C-M3_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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V10D100C-M3, V10D100CHM3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.48 V at IF = 2.5 A
TMBS ® eSMP® Series
TO-263AC (SMPD)
K
1
2
Top View
Bottom View
V10D100C
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
100 V
IFSM
VF at IF = 5.0 A (TA = 125 °C)
TJ max.
100 A
0.60 V
150 °C
Package
TO-263AC (SMPD)
Diode variations
Dual common cathode
FEATURES
• Trench MOS Schottky technology generation 2
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available:
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection in commercial, inductrial, and
automotive application.
MECHANICAL DATA
Case: TO-263AC (SMPD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Maximum DC reverse voltage
VDC
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
V10D100C
100
10
5
160
100
10 000
-40 to +150
UNIT
V
A
V
A
V/μs
°C
Revision: 06-Feb-15
1
Document Number: 89998
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000