SI5484DU-RC Datasheet, PDF (1/3 Pages) Vaishali Semiconductor – R-C Thermal Model Parameters

R-C Thermal Model Parameters
Si5484DU_RC
Vishay Siliconix
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient
Case
RT1
5.5431
28.8945 m
RT2
19.4536
1.1108
RT3
15.0558
1.4224
RT4
48.9104
1.4419
Thermal Capacitance (Joules/°C)
Junction to
Ambient
Case
CT1
2.1071 m
686.5381 u
CT2
13.3151 m
190.7991 u
CT3
178.1933 m
1.3230 m
CT4
1.4793
1.2716 m
Foot
N/A
N/A
N/A
N/A
Foot
N/A
N/A
N/A
N/A
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 73728
Revision 13-Jan-06
www.vishay.com
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