SI4856ADY-RC Datasheet, PDF (1/3 Pages) Vaishali Semiconductor – R-C Thermal Model Parameters

Si4856ADY_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
configuration are included. The corresponding values
for the Cauer/Filter configuration are available upon
request.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient
Case
RT1
2.0053
N/A
RT2
20.8011
N/A
RT3
28.2729
N/A
RT4
28.8060
N/A
Thermal Capacitance (Joules/°C)
Junction to
Ambient
Case
CT1
1.6405 m
N/A
CT2
24.4894 m
N/A
CT3
358.8053 m
N/A
CT4
2.5583
N/A
Foot
468.2017 m
4.8276
7.4177
5.9020
Foot
2.0074 m
39.9180 m
189.7165 m
11.7115 m
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number:74114
Revision 14-Nov-05
www.vishay.com
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