SI4684DY-RC Datasheet, PDF (1/3 Pages) Vaishali Semiconductor – R-C Thermal Model Parameters

R-C Thermal Model Parameters
Si4684DY_RC
Vishay Siliconix
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
configuration are included. The corresponding values
for the Cauer/Filter configuration are available upon
request.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient
Case
RT1
5.4825
N/A
RT2
14.0940
N/A
RT3
11.8997
N/A
RT4
18.5795
N/A
Thermal Capacitance (Joules/°C)
Junction to
Ambient
Case
CT1
8.6182 m
N/A
CT2
93.6547 m
N/A
CT3
6.1489
N/A
CT4
3.2294
N/A
Foot
2.7730
5.6035
12.5420
6.9783
Foot
617.0550 µ
18.1606 m
73.2626 m
9.1092 m
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number:74111
Revision 14-Nov-05
www.vishay.com
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