SI3585DV Datasheet, PDF (1/7 Pages) Vaishali Semiconductor – N- and P-Channel 20-V (D-S) MOSFET

Si3585DV
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
N-Channel
20
P-Channel
–20
r_DS(on) (W)
0.125 @ V_GS = 4.5 V
0.200 @ V_GS = 2.5 V
0.200 @ V_GS = –4.5 V
0.340 @ V_GS = –2.5 V
I_D (A)
2.4
1.8
–1.8
–1.2
TSOP-6
Top View
G1
1
6
D1
3 mm S2
2
5
S1
G2
3
4
D2
2.85 mm
D₁
G₁
S₁
N-Channel MOSFET
S₂
G₂
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol 10 secs Steady State 10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
T_A = 25_C
T_A = 70_C
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
T_A = 25_C
T_A = 70_C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
–20
"12
"12
2.4
2.0
–1.8
–1.5
1.7
1.4
–1.3
–1.2
8
–7
1.05
0.75
–1.05
–0.75
1.15
0.83
1.15
0.83
0.59
0.53
0.59
0.53
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t v 10 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71184
S-03512—Rev. B, 04-Apr-01
Symbol
R_thJA
R_thJF
N-Channel
Typ
Max
93
110
130
150
75
90
P-Channel
Typ
Max
93
110
130
150
75
90
Unit
_C/W
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