UF9640_15 Datasheet, PDF (7/8 Pages) Unisonic Technologies – P-CHANNEL POWER MOSFET

UF9640
 TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
300
250
200
150
100
50
0
0 50 100 150 200 250 300
Drain-Source Breakdown Voltage, -BV_DSS (V)
Power MOSFET
Drain Current vs. Gate Threshold Voltage
300
250
200
150
100
50
0
0
1
2
3
4
5
Gate Threshold Voltage, -V_TH (V)
Maximum Safe Operating Area
10²
Operation in this Area is United by RDM
100µs
10¹
10⁰
1ms
Notes:
1.T_C=25°C
2.T_J=150°C
10^-1₁₀₀^{3.Single Pulse} ₁₀₁
10ms
10²
Drain-Source Voltage, -V_DS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 8
QW-R502-484.E