81CXXX_12 Datasheet, PDF (7/16 Pages) Unisonic Technologies – VOLTAGE DETECTORS WITH BUILT-IN DELAY TIME

81CXXX/81NXXX
CMOS IC
„ ELECTRICAL CHARACTERISTICS(Cont.)
Detection voltage (4.0V ~ 4.9V)
PARAMETER
SYMBOL CIRCUIT
Detect Voltage
V_DF
1
TEST CONDITIONS
Hysteresis Range
Operating Voltage
Supply Current
N-Channel
Output Current
P- Channel
V_DF
Temperature Characteristics
Transient Delay Time
(V_DR ÆV_OUT inversion)
V_HYS
V_IN
I_SS
I_OUT
ΔV DF
ΔTOPR × VDF
t_DLY *
1
1 V_DF=1.6V ~ 6.0V
2
V_IN=4.0V
V_IN=5.0V
3 V_DS=0.5V, V_IN=4.0V
4
V_DS=2.1V, V_IN=8.0V
(CMOS output)
5 ^{VIN changes from}
0.6V ~ 10V
MIN
V_DF (T)
×0.98
V_DF
×0.02
0.7
TYP MAX
V_DF (T)
V_DF (T)
×1.02
V_DF
V_DF
×0.05 ×0.08
10.0
1.5 3.8
2.0 4.2
11.5
UNIT
V
V
V
μA
μA
mA
-15.4
mA
±100
ppm/°C
50
200 ms
Detection voltage (5.0V)
PARAMETER
SYMBOL CIRCUIT TEST CONDITIONS
MIN TYP MAX UNIT
Detect Voltage
V_DF
1
V_DF (T)
×0.98
V_DF (T)
V_DF (T)
×1.02
V
Hysteresis Range
V_HYS
1
V_DF
V_DF
V_DF
V
×0.02 ×0.05 ×0.08
Operating Voltage
V_IN
1 V_DF=1.6V ~ 6.0V
0.7
10.0 V
Supply Current
I_SS
2 V_IN=5.0V
2.0 4.2 μA
N-Channel
3 V_DS=0.5V, V_IN =5.0V
Output Current _{P- Channel}
I_OUT
4
V_DS=2.1V, V_IN=8.0V
(CMOS output)
13.0
mA
-15.4
mA
V_DF
ΔV DF
Temperature Characteristics ΔTOPR × VDF
±100
ppm/°C
Transient Delay Time
(V_DR ÆV_OUT inversion)
t_DLY *
5 ^{VIN changes from}
0.6V ~ 10V
50
200 ms
V_DF (T): established detect voltage value
Release Voltage: V_DR = V_DF + V_HYS
* Transient Delay Time: 1ms ~ 50ms & 200ms ~ 400ms versions are also available.
Note: The power consumption during power-start to output being stable (release operation) is 2μA greater than it is
after that period (completion of release operation) because of delay circuit through current.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 16
QW-R502-039,P