81CXXX_11 Datasheet, PDF (7/16 Pages) Unisonic Technologies – VOLTAGE DETECTORS WITH BUILT-IN DELAY TIME

81CXXX/81NXXX
CMOS IC
„ ELECTRICAL CHARACTERISTICS(Cont.)
Detection voltage (4.0V ~ 4.9V)
PARAMETER
SYMBOL CIRCUIT
Detect Voltage
V_DF
1
TEST CONDITIONS
Hysteresis Range
Operating Voltage
Supply Current
V_HYS
V_IN
I_SS
Output Current
I_OUT
V_DF
Temperature Characteristics
Transient Delay Time
(V_DR ÆV_OUT inversion)
ΔV DF
ΔTOPR × VDF
t_DLY *
1
1 V_DF=1.6V ~ 6.0V
2
V_IN=4.0V
V_IN=5.0V
N-ch
3
V_DS=0.5V, V_IN=4.0V
P-ch
4 V_DS=2.1V, V_IN=8.0V
(CMOS output)
5 ^{VIN changes from}
0.6V ~ 10V
MIN
V_DF (T)
×0.98
V_DF
×0.02
0.7
TYP MAX
V_DF (T)
V_DF (T)
×1.02
V_DF
V_DF
×0.05 ×0.08
10.0
1.5 3.8
2.0 4.2
UNIT
V
V
V
μA
μA
11.5
mA
-15.4
mA
±100
ppm/°C
50
200 ms
Detection voltage (5.0V)
PARAMETER
SYMBOL CIRCUIT TEST CONDITIONS
MIN TYP MAX UNIT
Detect Voltage
V_DF
1
V_DF (T)
×0.98
V_DF (T)
V_DF (T)
×1.02
V
Hysteresis Range
V_HYS
1
V_DF
V_DF
V_DF
V
×0.02 ×0.05 ×0.08
Operating Voltage
V_IN
1 V_DF=1.6V ~ 6.0V
0.7
10.0 V
Supply Current
I_SS
2 V_IN=5.0V
2.0 4.2 μA
Output Current
N-ch
3
V_DS=0.5V, V_IN =5.0V
I_OUT
P-ch
13.0
mA
4 V_DS=2.1V, V_IN=8.0V
(CMOS output)
-15.4
mA
V_DF
ΔV DF
Temperature Characteristics ΔTOPR × VDF
±100
ppm/°C
Transient Delay Time
(V_DR ÆV_OUT inversion)
t_DLY *
5 ^{VIN changes from}
0.6V ~ 10V
50
200 ms
V_DF (T): established detect voltage value
Release Voltage: V_DR = V_DF + V_HYS
* Transient Delay Time: 1ms ~ 50ms & 200ms ~ 400ms versions are also available.
Note: The power consumption during power-start to output being stable (release operation) is 2 μA greater than it is
after that period (completion of release operation) because of delay circuit through current.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 16
QW-R502-039,N