UFZ44_15 Datasheet, PDF (6/6 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

UFZ44
 TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
300
250
200
150
100
50
00
20
40
60 80 100
Drain-Source Breakdown Voltage, BV_DSS (V)
Drain-Source On-State Resistance
Characteristics
20
18
16
14
12
10
8
V_GS=10V, I_D=20A
6
4
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6
Drain to Source Voltage, V_DS (V)
Power MOSFET
Drain Current vs. Gate Threshold Voltage
300
250
200
150
100
50
0
0 0.5 1 1.5 2 2.5 3 3.5
Gate Threshold Voltage, V_TH (V)
Body-Diode Continuous Current vs.
Source to Drain Voltage
56
48
40
32
24
16
8
0
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage, V_SD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 6
QW-R107-066.C