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| 1N70_15 Datasheet, PDF (6/8 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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1N70
ï® TYPICAL CHARACTERISTICS
Output Characteristics
100
VGS
Top: 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
Bottorm:5.5V
10-1
10-2
10-1
250μs Pulse Test
TC=25â
100
101
Drain-Source Voltage, VDS (V)
On-Resistance vs. Drain Current
30 TJ=25â
25
VGS=10V
20
VGS=20V
15
10
5
0
0.0 0.5
1.0
1.5
2.0 2.5
Drain Current, ID (A)
Power MOSFET
Transfer Characteristics
VDS=50V
250μs Pulse Test
100
125â
25â
-40â
10-1
2
4
6
8
10
Gate-Source Voltage, VGS (V)
Source- Drain Diode Forward Voltage
VGS=0V
250μs Pulse Test
100
125â 25â
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, VSD (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 8
QW-R502-171.E
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