PZT2222A Datasheet, PDF (5/6 Pages) NXP Semiconductors – NPN switching transistor

PZT2222A
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
DC Current Gain
vs. Collector Current
500
V_CE =5V
400
125Â¥
300
200 _25Â¥
100 _-40Â¥
0
0.1 0.3 1 3 10 30 100 300
Collector Current, I_C (mA)




Base-Emitter Saturation Voltage
vs. Collector Current
Ȧ=10
1
-40Â¥
0.8
25Â¥
0.6
125Â¥
0.4
1
10
100 500
Collector Current, I_C (mA)




Collector-Cutoff Current
vs. Ambient Temperature
500
100
V_CB=40V
10
1
0.1
25 50 75 100 125 150
Ambient Temperature, TA(Â¥)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector-Emitter Saturation Voltage
vs. Collector Current
0.4
Ȧ=10
0.3
125Â¥
0.2
25Â¥
0.1
-40Â¥
1
10
100 500
Collector Current, IC (mA)


Base-Emitter On Voltage
vs. Collector Current
1
V_CE =5V
-40Â¥
0.8
25Â¥
0.6
125Â¥
0.4
0.2
0.1
1
10
Collector Current, IC (mA)
25


Emitter Transition and Output
Capacitance vs. Reverse Bias Voltage
20
f=1MHz
16
12
C_te
8
C_ob
4
0.1
1
10
100
Reverse Bias Voltage (V)


5 of 6
QW-R207-001,B