MJE13007_15 Datasheet, PDF (5/6 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR

MJE13007
 TYPICAL CHARACTERISTICS
1.4
I_C/I_B=5
1.2
1
I_C=-40°C
0.8
25°C
0.6 ^100°C
0.4
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
Collector Current, I_C (A)
Fig. 2 Base-Emitter Saturation Voltage
NPN SILICON TRANSISTOR
10
5
I_C/I_B=5
2
1
0.5
0.2
0.1
0.05
I_C=-40°C
25°C
0.02
100°C
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2
5 10
Collector Current, I_C (A)
Fig. 3 Collector-Emitter Saturation Voltage
10000
C_ib
1000
C_ob
100
T_J=25°C
100.1
1
10
100
Reverse Voltage,V_R (V)
Fig. 6 Capacitance
1000
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
100
50
Extended SOA@1μs,10μs
20
10
5
2
T_C=25°C
1
DC
0.5
1μs
10μs
1ms
5ms
0.2
0.1
0.05
0.02
0.01
10
Bonding wire limit
Thermal limit
Second breakdown limit
curves apply below
rated vceo
20 30 50 70 100 200 300 500 1000
Collector-Emitter Voltage, V_CE (V)
Fig. 7 Maximum Forward Bias Safe
Operating Area
5 of 6
QW-R203-019.I