MJE13007_10 Datasheet, PDF (5/6 Pages) Unisonic Technologies – NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS

MJE13007
„ TYPICAL CHARACTERISTICS
Figure 2. Base-Emitter Saturation Voltage
1.4
I_C/I_B=5
1.2
1
I_C=-40°C
0.8
25°C
0.6 ^100°C
0.4
0.01 0.02 0.05 0.1 0.2 0.5 1 2
Collector Current, I_C (A)
5 10
NPN SILICON TRANSISTOR
Figure 3. Collector-Emitter Saturation Voltage
10
5
I_C/I_B=5
2
1
0.5
0.2
0.1
0.05
I_C=-40°C
25°C
0.02 ^100°C
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2
5 10
Collector Current, I_C (A)
10000
1000
100
Figure 6. Capacitance
T_J=25°C
C_ib
C_ob
10
0.1
1
10
100
Reverse Voltage,V_R (V)
1000
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Figure 7. Maximum Forward Bias Safe
Operating Area
100
50
Extended SOA@1μs,10μs
20
10
5
2 ^TC=25°C
1
DC
0.5
1μs
10μs
1ms
5ms
0.2
0.1
0.05
0.02
0.01
10
Bonding wire limit
Thermal limit
Second breakdown limit
curves apply below
rated vceo
20 30 50 70 100 200 300 500 1000
Collector-Emitter Voltage, V_CE (V)
5 of 6
QW-R203-019.F