MJE13003K_15 Datasheet, PDF (5/8 Pages) Unisonic Technologies – NPN SILICON POWER TRANSISTOR

MJE13003K
„ SWITCHING TIMES NOTE
NPN SILICON TRANSISTOR
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive loads, which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements
must be made on each waveform to determine the total switching time. For this reason, the following new terms
have been defined.
t_SV = Voltage Storage Time, 90% I_B1 to 10% Vclamp
t_RV = Voltage Rise Time, 10 ~ 90% Vclamp
t_FI= Current Fall Time, 90 ~ 10% I_C
t_TI = Current Tail, 10 ~ 2% I_C
t_C = Crossover Time, 10% Vclamp to 10% I_C
For the designer, there is minimal switching loss during storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation from AN–222:
PSWT = 1/2 V_CCI_C (t_C) f
In general, t_RV + t_FI ≈ t_C. However, at lower test currents this relationship may not be valid.
As is common with most switching transistors, resistive switching is specified at 25°C and has become a
benchmark for designers. However, for designers of high frequency converter circuits, the user oriented
specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (t_C and t_SV) which
are guaranteed at 100°C.
RESISTIVE SWITCHING PERFORMANCE
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 8
QW-R223-006,A