English
Language : 

UH8106XXG-AE3-R Datasheet, PDF (4/6 Pages) Unisonic Technologies – CMOS IC
UH8106
Advance
CMOS IC
 ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Magnetic Flux Density
B
Unlimited
mT
Supply Voltage
Output Current
Power Dissipation
VDD
IO
SIP-3
SOT-23
PD
7
V
1
mA
400
mW
200
mW
Maximum Junction Temp
TJ
150
°C
Operation Temperature
TOPR
-40 ~ +85
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 RECOMMENDED OPERATING CONDITIONS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
Conditions
Supply Voltage
Ambient Temperature
VDD
Operating
TA
 ELECTRICAL CHARACTERISTICS
MIN TYP MAX UNIT
2.2
5.5
V
-40
85
°C
VDD=2.2V to 5.5V, TA=25°C, unless otherwise specified
PARAMETER
SYMBOL
CONDITIONS
Supply Voltage Range
VDD
Operating
Supply Current
Average (|B|<|Brp|, VDD=3.6V)
IDD
Awake (|B|<|Brp|, VDD=3.6V)
Output Leakage Current
Sleep (|B|<|Brp|, VDD=3.6V)
IOFF
VOUT = 5V, only for UH8106N
Output Low Voltage
Output High Voltage
VOL
ISINK = 1mA, |B|>|Bop|
VOH
ISOURCE = 1mA, |B|<|Brp|,
only for UH8106C
Wake up Time
Period
tAWAKE
tPERIOD
Duty cycle
d.c.
MIN
2.2
VDD-0.4
TYP
4
2
2
0.02
50
35
0.17
 MAGNETIC CHARACTERISTICS (TA=25°C, VDD=2.2V to 5.5V , 1mT=10Gauss)
MAX
5.5
6
3
3
0.1
0.4
UNIT
V
uA
mA
uA
uA
V
V
uS
mS
%
RANK
1
2
PARAMETER
Operation Points
Release Points
Hysteresis
Operation Points
Release Points
Hysteresis
SYMBOL
|BOP|
|BRP|
|BHYS|
|BOP|
|BRP|
|BHYS|
TEST CONDITIONS
|B| > |BOP|
|B| < |BRP|
|BOPX–BRPX|
|B| > |BOP|
|B| < |BRP|
|BOPX–BRPX|
MIN TYP MAX UNIT
13
18
23 Gauss
5
10
15 Gauss
8
Gauss
10
18
40 Gauss
5
10
35 Gauss
8
Gauss
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R118-024.a