UH8102 Datasheet, PDF (4/7 Pages) Unisonic Technologies – LOW POWER HALL EFFECT SWITCH

UH8102
CMOS IC
„ ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Magnetic Flux Density
B
Unlimited
mT
Supply Voltage
V_DD
5.5
V
Supply current
I_Q
-1 ~ +2.5
mA
Junction Temperature
T_J
150
°C
Operation Temperature
T_OPR
-40 ~ +85
°C
Storage Temperature
T_STG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ RECOMMENDED OPERATING CONDITIONS (T_A=25°C)
PARAMETER
Supply Voltage
Output Voltage
Ambient Temperature
SYMBOL
V_DD
V_OUT
T_A
CONDITIONS
Operating
„ ELECTRICAL CHARACTERISTICS (T_A=25°C)
PARAMETER
Output Saturation Voltage
Output Leakage Current
Supply Current
Operating Time
Standby Time
Duty Cycle
SYMBOL
V_SAT
I_OFF
I_DD(EN)
I_DD(DIS)
I_DD(AVG)
T_OP
T_SD
D.C.
CONDITIONS
V_DD=2.7V
V_DD=2.7V
Chip enable
V_DD=2.7V
„ MAGNETIC CHARACTERISTICS ( T_A=25°C,V_DD=2.7V)
MIN TYP MAX UNIT
2.4 2.7 5.5
V
-0.3 2.7 5.5
V
-40
25
85
°C
MIN TYP MAX UNIT
0.1
V
0.01
uA
1.1
mA
2.5
uA
3
20
uA
60
us
150
ms
0.04
%
For UH8102A (LOW level when no magnetic field is applied)
Rank 1
PARAMETER
SYMBOL
MIN
Operation Points
Release Points
Hysteresis
|B_OP|
7
|B_RP|
15
|B_OP–B_RP|
5
Rank 2
PARAMETER
SYMBOL
MIN
Operation Points
Release Points
Hysteresis
|B_OP|
7
|B_RP|
15
|B_OP–B_RP|
5
For UH8102B (HIGH level when no magnetic field is applied)
Rank 1
PARAMETER
SYMBOL
MIN
Operation Points
Release Points
Hysteresis
|B_OP|
15
|B_RP|
7
|B_OP–B_RP|
5
Rank 2
PARAMETER
SYMBOL
MIN
Operation Points
Release Points
Hysteresis
|B_OP|
15
|B_RP|
7
|B_OP–B_RP|
5
TYP
15
25
10
TYP
TYP
25
15
10
TYP
MAX
25
35
15
MAX
50
70
50
MAX
35
25
15
MAX
70
50
50
UNIT
Gauss
UNIT
Gauss
UNIT
Gauss
UNIT
Gauss
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 7
QW-R502-414.C