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UH8100 Datasheet, PDF (4/6 Pages) Unisonic Technologies – LOW POWER HALL EFFECT SWITCH
UH8100
CMOS IC
„ ABSOLUTE MAXIMUM RATING (TA=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Magnetic Flux Density
B
Unlimited
mT
Supply Voltage
VDD
7
V
Output Current
IO
10
mA
Package Power Dissipation
Junction Temperature
Operation Temperature
Storage Temperature
PD
TJ
TOPR
TSTG
230
mW
150
℃
-40 ~ +85
℃
-65 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ RECOMMENDED OPERATING CONDITIONS (TA=25℃)
PARAMETER
Supply Voltage
SYMBOL
VDD
CONDITIONS
Operating
„ ELECTRICAL CHARACTERISTICS (TA=25℃)
MIN TYP MAX UNIT
2.5
5.5 V
PARAMETER
Output On Voltage
Output Leakage Current
Supply Current
Supply Current
Awake Time
Period
Duty Cycle
SYMBOL
VOUT
IOFF
IDD(EN)
IDD(DIS)
IDD(AVG)
TAWAKE
TPERIOD
D.C.
CONDITIONS
VDD=3V, IOUT=1mA
VDD=3V, VOUT=5.5V, B<BRP
VDD=3V, Chip enable
VDD=3V, Chip disable
VDD=3V,
average supply current
UH8100A
UH8100B
VDD=3V
VDD=3V,UH8100A
VDD=3V,UH8100B
VDD=3V,UH8100A
VDD=3V,UH8100B
MIN
TYP MAX UNIT
0.1 0.3 V
<0.1 1
uA
2.0 mA
5
10 uA
280 500 uA
50 100 us
50 100 ms
200 400 us
0.1
%
25
%
„ MAGNETIC CHARACTERISTICS ( TA=25℃,VDD=3V)
PARAMETER
Operation Points
Release Points
Hysteresis
SYMBOL
|BOP|
|BRP|
|BOP–BRP|
MIN
10
TYP
MAX
UNIT
40
60
30
Gauss
10
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-413.C