UF540_15 Datasheet, PDF (4/4 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

UF540
 TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
300
250
200
150
100
50
00
25 50
75
100 125
Drain-Source Breakdown Voltage, BV_DSS (V)
Drain-Source On-State Resistance
Characteristics
20
16
V_GS=10V, I_D=15A
12
8
4
V_GS=10V, I_D=2A
0
0
0.1 0.2 0.3 0.4 0.5
Drain to Source Voltage, V_DS (V)
Power MOSFET
Drain Current vs. Gate Threshold Voltage
300
250
200
150
100
50
0
0 0.5 1 1.5 2 2.5 3
Gate Threshold Voltage, V_TH (V)
Drain Current vs. Source to Drain Voltage
20
16
12
8
4
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Source to Drain Voltage, V_SD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-715.C