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| MMDT3946 Datasheet, PDF (4/5 Pages) Transys Electronics – CMOPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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MMDT3946
Preliminary
DUAL TRANSISTOR
 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.)
TR1(PNP)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS (Note 1)
Collector-Base Breakdown Voltage
V(BR)CBO IC=-10μA, IE=0
Collector-Emitter Breakdown Voltage
V(BR)CEO IC=-1.0mA, IB=0
Emitter-Base Breakdown Voltage
V(BR)EBO IE=-10μA, IC=0
Collector Cutoff Current
ICEX VCE=-30V, VEB(OFF)=-3.0V
Base Cutoff Current
IBL
VCE=-30V, VEB(OFF)=-3.0V
ON CHARACTERISTICS (Note 1)
IC=-100µA, VCE=-1.0V
DC Current Gain
IC=-1.0mA, VCE=-1.0V
hEF IC=-10mA, VCE=-1.0V
IC=-50mA, VCE=-1.0V
IC=-100mA, VCE=-1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-10mA, IB=-1.0mA
IC=-50mA, IB=-5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
IC=-10mA, IB=-1.0mA
IC=-50mA, IB=-5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
COBO VCB=-5.0V, f=1.0MHz, IE=0
Input Capacitance
CIBO VEB=-0.5V, f=1.0MHz, IC=0
Input Impedance
hIE
Voltage Feedback Ratio
Small Signal Current Gain
hRE
hFE
VCE=10V, IC=1.0mA, f=1.0kHz
Output Admittance
hOE
Current Gain-Bandwidth Product
fT
VCE=-20V, IC=-10mA, f=100MHz
Noise Figure
NF
VCE=-5.0V, IC=-100μA, RS=1.0kâ¦,
f=1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
tD
VCC=-3.0V, IC=-10mA,
tR
VBE(OFF)=0.5V, IB1=-1.0mA
Storage Time
Fall Time
tS
VCC=-3.0V, IC=-10mA,
tF
IB1=IB2=-1.0mA
Note: 1. Short duration pulse test used to minimize self-heating effect.
MIN
-40
-40
-5.0
60
80
100
60
30
-0.65
2.0
0.1
100
3.0
250
TYP MAX UNIT
V
V
V
-50 nA
-50 nA
300
-0.25
V
-0.40
-0.85 V
-0.95
4.5 pF
10 pF
12 kâ¦
10 Ã10-4
400
60 μS
MHz
4.0 dB
35 ns
35 ns
225 ns
75 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R218-015.a
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