8N60K-MT Datasheet, PDF (4/7 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

8N60K-MT
Power MOSFET
 ELECTRICAL CHARACTERISTICS (T_C =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS V_GS = 0 V, I_D = 250 μA
600
Drain-Source Leakage Current
I_DSS
V_DS = 600 V, V_GS = 0V
Gate-Source Leakage Current
Forward
Reverse
I_GSS
V_GS = 30 V, V_DS = 0V
V_GS = -30 V, V_DS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ I_D=250μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V_GS(TH)
V_DS = V_GS, I_D = 250μA
2.0
Static Drain-Source On-State Resistance
R_DS(ON) V_GS = 10V, I_D = 4.0A
V
10 µA
100 nA
-100 nA
0.7
V/°C
4.0 V
1.2 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_ISS
C_OSS
C_RSS
V_DS = 25V, V_GS = 0V,
f = 1MHz
1120 1255 pF
120 135 pF
13 16 pF
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Q_G
Q_GS
Q_GD
t_D(ON)
t_R
t_D(OFF)
t_F
V_DS=50V, V_GS=1.0V,
I_D=1.3A (Note 1, 2)
V_DD =30V, I_D =0.5A,
R_G=25Ω (Note 1, 2)
28 36 nC
8
nC
6
nC
80 90 ns
89 100 ns
125 160 ns
64 80 ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V_SD
V_GS = 0V, I_S = 8A
Maximum Continuous Drain-Source Diode
Forward Current
I_S
1.4 V
8A
Maximum Pulsed Drain-Source Diode
Forward Current
I_SM
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
32 A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R205-035.D