70N06_15 Datasheet, PDF (4/9 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

70N06
Power MOSFET
 ELECTRICAL CHARACTERISTICS (T_C =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS
V_GS = 0 V, I_D = 250 μA
60
Drain-Source Leakage Current
I_DSS
V_DS = 60 V, V_GS = 0 V
Gate-Source Leakage Current
Forward
Reverse
I_GSS
V_GS = 20V, V_DS = 0 V
V_GS = -20V, V_DS = 0 V
Breakdown Voltage Temperature
Coefficient
△BV_DSS/△T_J I_D = 1mA, Referenced to 25°C
V
1 μA
100 nA
-100 nA
0.08
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
V_GS(TH)
V_DS = V_GS, I_D = 250 μA
2.0
Static Drain-Source On-State Resistance
R_DS(ON) V_GS = 10 V, I_D = 35 A
4.0 V
15 mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_ISS
C_OSS
C_RSS
V_GS = 0 V, V_DS = 25 V
f = 1MHz
1800 2000 pF
800 900 pF
130 150 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge (Miller Charge)
t_D(ON)
t_R
t_D(OFF)
t_F
Q_G
Q_GS
Q_GD
V_DD = 30V, V_GS=10V,I_D =1 A
(Note 1, 2)
V_DS = 60V, V_GS = 10 V,
I_D = 48A (Note 1, 2)
90 120 ns
350 400 ns
260 300 ns
260 300 ns
210 250 nC
50
nC
120
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
V_SD
V_GS = 0 V, I_S = 70A
I_S
Maximum Pulsed Drain-Source Diode
Forward Current
I_SM
Reverse Recovery Time
t_RR
V_GS = 0 V, I_S = 70A
Reverse Recovery Charge
Q_RR
dI_F / dt = 100 A/μs
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature
1.4 V
70
A
280
90
ns
300
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 9
QW-R502-089.D