2SD669 Datasheet, PDF (4/5 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SD669/A
TYPICAL CHARACTERISTICS
DC Current Transfer Ratio
vs. Collector Current
300
Ta=75^Â¥
250
25
200
150
-20
100
50 VCE=5V
1
1 3 10 30 100 300 1,000 3,000
CollectorCurrent, IC (mA)


Base to Emitter Saturation Voltage
vs. Collector Current
1.2
1.0 ^IC=10IB
0.8
0.6
TC^=-20Â¥
25
75
0.4
0.2
0
1 3 10 30 100 300 1,000
CollectorCurrent, I_C (mA)


Collector Output Capacitance
vs. Collector to Base Voltage
200
f=1MHz
100 _IE=0
50
20
10
5
2
12
5 10 20 50 100
Collector to Base Voltage, VCB (V)





UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
NPN SILICON TRANSISTOR
Collector to Emitter Saturation Voltage
vs. Collector Current
1.2
I_C=10 I_B
1.0
0.8
0.6
0.4
0.2
0
1
T^C=75Â¥
25
-20
3 10 30 100 300 1,000
CollectorCurrent, IC (mA)


Gain Bandwidth Product
vs. Collector Current
240
V_CE=5V
200 ^Ta=25Â¥
160
120
80
40
0
10
30
100 300 1,000
Collector Current, I_C (mA)


Area of Safe Operation
3
(13.3V, 1.5A)
1.0
40V, 0.5A
0.3
2SD669A
0.1 ^{DC Operation (TC=25Â¥)}
(120V, 0.04A)
0.03
(160V, 0.02A)
2SD669
0.01
1
3
10 30 100 300
Collector to Emitter Voltage, VCE (V)


4 of 5
QW-R204-005,E