2SD1616_05 Datasheet, PDF (4/4 Pages) Unisonic Technologies – NPN EPITAXIAL SILICON TRANSISTOR

2SD1616/A
TYPICAL CHARACTERISTICS(Cont.)


DC Current Gain
1000
500
300
VCE=2V
100
50
30
10
5
3
1
0.01 0.03 0.05 0.1 0.3 0.5 1
3 5 10
Collector Current, I_C (A)




Safe Operating Area
10
5
3
pw=1ms
1
0.5
200ms
10ms
0.3
DC
0.1
0.05
0.03
0.01
1
3 5 10
30 50 100 300
Collector-Emitter Voltage, VCE (V)
NPN SILICON TRANSISTOR
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
IC=20IB
5
3
1
V_{BE (SAT)}
0.5
0.3
0.1
0.05
0.03
V_{CE (SAT)}
0.01
0.030.05 0.1 0.3 0.5 1
3 5 10
Collector Current, I_C (A)


Power Derating
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150 175 200
Ambient Temperature, Ta (Â¥)
UTC assum es no responsibility for equipm ent failures that result from using products at values that
exceed, even m om entarily, rated values (such as m axim um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation
presented in this docum ent does not form part of any quotation or contract, is believed to be accurate
and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-008,C