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| 2SC3320_15 Datasheet, PDF (4/5 Pages) Unisonic Technologies – HIGH VOLTAGE HIGH SPEED SWITCHING | |||
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2SC3320
ï® TYPICAL CHARACTERISTICS
NPN EPITAXIAL SILICON TRANSISTOR
4
3
1
0.5
0.3
0.1
0.05
0.03
Base and Collector Saturation Voltage
VBE(SAT)
TC=25âIC=5IB
VCE(SAT)
0.01
0.05 0.1
0.3 0.5 1
3 5 10 20
Collector Current, IC (A)
Safe Operating Area
30
10
10
100
s
s
5
3
PW=1ms
1
DC
0.5
0.3
0.1 TC=25â
0.05 Single Pulse
0.03
1
3 5 10
30 50 100 300 5001000
Collector Emitter voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R214-008.E
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