2SB1386_15 Datasheet, PDF (4/5 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

2SB1386
 TYPICAL CHARACTERICS(Cont.)
Collector-Emitter Saturation Voltage vs.
Collector Current (2)
-5
Ic/IB=10
-2
-1
-0.5
-0.2
-0.1
Ta=100℃
-0.05
Ta=25℃
-0.02
Ta= -25℃
-0.01
-2m -5m -0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10
Collector Current, Ic(A)
Collector-Emitter Saturation Voltage vs.
Collector Current (IV)
-5
Ic/IB=40
-2
Ta= -25℃
-1
Ta=25℃
-0.5
-0.2
-0.1
-0.05
Ta=100℃
-0.02
-0.0-12m
-5m -0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2
Collector Current, Ic(A)
-5 -10
Transetion Frequency vs. Emitter Current
1000
500 ^Ta=25℃
200
VcE= -6V
100
50
20
10
5
2
1
12
5 10 20 _{50 100200 500 1000}
Emitter Current, IE(mA)
PNP SILICON TRANSISTOR
Collector-Emitter Saturation Voltage vs.
Collector Current (3)
-5
Ic/IB=30
-2
-1
Ta=100℃
-0.5
Ta=25℃
-0.2
-0.1
-0.05
-0.02
-0.01
-2m
Ta= -25℃
-5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10
Collector Current, Ic(A)
Collector-Emitter Saturation Voltage vs.
Collector Current (V)
-5
Ic/IB=50
Ta= -25℃
-2
Ta=25℃
-1
Ta=100℃
-0.5
-0.2
-0.1
-0.05
-0.02
-0.0-12m
-5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10
Collector Current, Ic(A)
1000
500
Collector Output Capacitance vs.
Collector-Base Voltage
Ta=25℃
f =1MHz
IE=0A
200
100
50
20
10
-0.1 -0.2 _-0.5 -1 -2 -5 -10 -20 -50
Collector to Base Voltage, VCB(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R208-019.D