2SA1740_12 Datasheet, PDF (4/5 Pages) Unisonic Technologies – HIGH VOLTAGE DRIVER APPLICATION

2SA1740
„ TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
Collector Current vs. Base to Emitter Voltage
-120
VCE=-10V
-100
-80
-60
TA=25
-40
TA=70
-20
TA= -30
0
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
Base to Emitter Voltage, V_BE(V)
DC Current Gain vs.Collector Current
5
3
TA=70
VCE=-10V
2
100
TA=25
7
5
TA= -30
3
2
10
7
5
7-1.0 2 3 5 7 -10 2 3 5 7-100 2 3
Collector Current,I_C(mA)
Switch Time vs.Collector Current
10
7
5
tstg
3
2
1.0
tf
7
5
3
ton
2
0.1 _VCC=-150V
7
5
-10IB1=10IB2=IC
3 5 7 10 2 3
5 7 100
23 5
Collector Current,I_C( mA)
Collector Current vs.Collector to Emitter Voltage
7
5 ^Icp
3
2
Ic
100
7
5
1ms
10ms
3
100ms
2
1.0
DC Operation
7
5
3
2
*Single pulse Ta=25
0.1
7
Mounted on ceramic board
(250mm²*0.8mm)
5
3
5 7 10
2 3 5 7 100 2 3 5
Collector to Emitter Voltage,V_CE(V)
Collector Dissipation vs.Ambient Temperature
1.4
1.6
1.2
1.0
0.8
Collector to Emitter Saturation Voltage vs.Collector Current
5
3
Ic/IB=10
2
-1.0
7
5
0.6
0.4
0.2 _{Mounted on ceramic board}
(250mm²*0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature ,T_A ( )
3
2
-0.1
7
5
7-1.0
TA=70
TA=-30 ^TA=25
2 3 5 7 -10 2 3 5 7-100 2
Collector Current,I_C( mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R208-026,C