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| 1N50K-TA Datasheet, PDF (4/7 Pages) Unisonic Technologies – N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE | |||
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1N50K-TA
Preliminary
ï® ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=500V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=0.65A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
CISS
COSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
VGS=10V, VDS=50V, ID=1.3A
(Note 1, 2)
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=30V, ID=0.5A, RG=25â¦
(Note 1, 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=1.3A, VGS=0V
Notes: 1. Pulse Test: Pulse width ⤠300µs, Duty cycle ⤠2%.
2. Essentially independent of operating temperature.
Power MOSFET
MIN TYP MAX UNIT
500
V
1 µA
+100 nA
-100 nA
3.0
5.0 V
5 6â¦
180
pF
30
pF
12.5
pF
11 15 nC
2.5
nC
1
nC
37.5
ns
20
ns
53
ns
12
ns
1.3 A
5.2 A
1.2 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 7
QW-R205-048.b
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